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Schottky Barrier Diodes (SBD)
MA3SE01
Silicon epitaxial planar type
For cellular phone
■ Features
• High-frequency wave detection is possible
• Low forward voltage V
• Small junction-capacitance
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Single
Series
Peak forward current
Single
Series
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Dynamic resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
Publication date: February 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
F
= 25°C
a
Symbol
Rating
V
20
R
V
20
RM
I
35
F
25
I
100
FM
70
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V
I
F1
F
V
I
F2
F
I
V
R
R
C
V
t
R
R
I
d
F
(0.51)
Unit
V
1 : Anode 1
V
2 : Cathode 2
3 : Cathode 1
mA
EIAJ : SC-81
mA
Marking Symbol: M6A
°C
Internal Connection
°C
Conditions
= 1 mA
= 35 mA
= 15 V
= 0 V, f = 1 MHz
= 5 mA
SKH00066CED
0.28
±0.05
3
1 2
0.28
±0.05
(0.51)
(0.80)
(0.80)
+0.05
1.60
–0.03
3˚
Anode 2
SSMini3-F2 Package
3
1
2
Min
Typ
Max
0.41
1.0
200
1.2
40
Unit: mm
+0.05
0.12
–0.02
+0.05
0.60
–0.03
Unit
V
V
nA
pF
Ω
1
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Summary of Contents for Panasonic MA3SE01
- Page 1 Schottky Barrier Diodes (SBD) MA3SE01 Silicon epitaxial planar type For cellular phone ■ Features • High-frequency wave detection is possible • Low forward voltage V • Small junction-capacitance ■ Absolute Maximum Ratings T Parameter Symbol Reverse voltage Maximum peak reverse voltage...
- Page 2 MA3SE01 V 25°C 75°C = 125°C −20°C −1 −2 ( V ) Forward voltage V V = 125°C 75°C −1 25°C −2 −3 Reverse voltage V ( V ) SKH00066CED V = 25°C ( V ) Reverse voltage V...
- Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.