Transistors
2SA1806J
Silicon PNP epitaxial planar type
For high speed switching
■ Features
• High speed switching
• Low collector-emitter saturation voltage V
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE1
Ranking is not given for any product.
Publication date: August 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol
Rating
−15
V
CBO
−15
V
CEO
−4
V
EBO
−50
I
C
−100
I
CP
P
125
C
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
I
V
CBO
CB
I
V
EBO
CE
*
h
V
FE1
CE
h
V
FE2
CE
= −10 mA, I
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
t
Refer to the switching time
on
t
measurement circuit
off
t
stg
Q
R
50 to 120
90 to 150
SJC00300AED
0.27
Unit
V
V
V
mA
mA
mW
Marking Symbol: AK
°C
°C
Conditions
= −8 V, I
= 0
E
= −3 V, I
= 0
C
= −1 V, I
= −10 mA
C
= −1 V, I
= −1 mA
C
= −1 mA
B
= −10 V, I
= 10 mA, f = 200 MHz
E
= −5 V, I
= 0, f = 1 MHz
E
+0.05
1.60
–0.03
+0.03
0.12
–0.01
1.00
±0.05
3
1
2
±0.02
(0.50)(0.50)
5˚
EIAJ: SC-89
SSMini3-F1 Package
Min
Typ
Max
− 0.1
− 0.1
50
150
30
− 0.1
− 0.2
800
1 500
1
12
20
19
Unit: mm
1: Base
2: Emitter
3: Collector
Unit
µA
µA
V
MHz
pF
ns
ns
ns
1